APA (7th ed.) Citation

Fujii, S., Kano, J., Oshime, N., Higuchi, T., Nishina, Y., Fujii, T., . . . Ota, H. (2021). Light reflectance and photoelectron yield spectroscopy enable acceptor level measurement in p-type Ba1−xTiO3 semiconductor. Journal of Applied Physics, 129(8), 1. https://doi.org/10.1063/5.0033761

Chicago Style (17th ed.) Citation

Fujii, Saya, Jun Kano, Norihiro Oshime, Tohru Higuchi, Yuta Nishina, Tatsuo Fujii, Naoshi Ikeda, and Hiromi Ota. "Light Reflectance and Photoelectron Yield Spectroscopy Enable Acceptor Level Measurement in P-type Ba1−xTiO3 Semiconductor." Journal of Applied Physics 129, no. 8 (2021): 1. https://doi.org/10.1063/5.0033761.

MLA (9th ed.) Citation

Fujii, Saya, et al. "Light Reflectance and Photoelectron Yield Spectroscopy Enable Acceptor Level Measurement in P-type Ba1−xTiO3 Semiconductor." Journal of Applied Physics, vol. 129, no. 8, 2021, p. 1, https://doi.org/10.1063/5.0033761.