Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors.
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| Title: | Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors. |
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| Authors: | Madhulika, arun@pec.edu.in, Malik, Amit, Kamboj, Priyanka, Awasthi, Shivansh, Thakur, Priyanka, Jain, Neelu, Mishra, Meena, Kumar, Sanjeev, Rawal, Dipendra S, Singh, Arun K |
| Source: | Semiconductor Science & Technology; Mar2021, Vol. 36 Issue 3, p1-7, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 02681242 |
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| DOI: | 10.1088/1361-6641/abd265 |
