APA (7th ed.) Citation

Madhulika, Malik, A., Kamboj, P., Awasthi, S., Thakur, P., Jain, N., . . . Singh, A. K. (2021). Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors. Semiconductor Science & Technology, 36(3), 1. https://doi.org/10.1088/1361-6641/abd265

Chicago Style (17th ed.) Citation

Madhulika, et al. "Parameter-based Modeling of Nanoscale Material Thermal Noise in Gallium Nitride High-electron-mobility Transistors." Semiconductor Science & Technology 36, no. 3 (2021): 1. https://doi.org/10.1088/1361-6641/abd265.

MLA (9th ed.) Citation

Madhulika, et al. "Parameter-based Modeling of Nanoscale Material Thermal Noise in Gallium Nitride High-electron-mobility Transistors." Semiconductor Science & Technology, vol. 36, no. 3, 2021, p. 1, https://doi.org/10.1088/1361-6641/abd265.