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Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors.

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Title: Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors.
Authors: Madhulika, arun@pec.edu.in, Malik, Amit, Kamboj, Priyanka, Awasthi, Shivansh, Thakur, Priyanka, Jain, Neelu, Mishra, Meena, Kumar, Sanjeev, Rawal, Dipendra S, Singh, Arun K
Source: Semiconductor Science & Technology; Mar2021, Vol. 36 Issue 3, p1-7, 7p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 149122819
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; Mar2021, Vol. 36 Issue 3, p1-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=149122819
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      – Type: doi
        Value: 10.1088/1361-6641/abd265
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      – Code: eng
        Text: English
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      – TitleFull: Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors.
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              Text: Mar2021
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              Y: 2021
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