View in EDS

Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress

Saved in:
Bibliographic Details
Title: Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
Authors: Kim, Dongjin1, Billah, Mohammad Masum1, Lee, Suhui1, Siddik, Abu Bakar1, Cho, Young Joo1, Jang, Jin1, jjang@khu.ac.kr, Lee, Jaeseob2, Lee, Yongsu2, Shin, Jiyeong2
Source: Advanced Engineering Materials; Mar2021, Vol. 23 Issue 3, p1-9, 9p
Database: Applied Science & Technology Source
Description
ISSN:14381656
DOI:10.1002/adem.202000901