APA (7th ed.) Citation

Kim, D., Billah, M. M., Lee, S., Siddik, A. B., Cho, Y. J., Jang, J., . . . Shin, J. (2021). Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress. Advanced Engineering Materials, 23(3), 1. https://doi.org/10.1002/adem.202000901

Chicago Style (17th ed.) Citation

Kim, Dongjin, Mohammad Masum Billah, Suhui Lee, Abu Bakar Siddik, Young Joo Cho, Jin Jang, Jaeseob Lee, Yongsu Lee, and Jiyeong Shin. "Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress." Advanced Engineering Materials 23, no. 3 (2021): 1. https://doi.org/10.1002/adem.202000901.

MLA (9th ed.) Citation

Kim, Dongjin, et al. "Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress." Advanced Engineering Materials, vol. 23, no. 3, 2021, p. 1, https://doi.org/10.1002/adem.202000901.