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Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress

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Title: Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
Authors: Kim, Dongjin1, Billah, Mohammad Masum1, Lee, Suhui1, Siddik, Abu Bakar1, Cho, Young Joo1, Jang, Jin1, jjang@khu.ac.kr, Lee, Jaeseob2, Lee, Yongsu2, Shin, Jiyeong2
Source: Advanced Engineering Materials; Mar2021, Vol. 23 Issue 3, p1-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 149432853
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PubType: Academic Journal
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  Data: Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Engineering+Materials%22">Advanced Engineering Materials</searchLink>; Mar2021, Vol. 23 Issue 3, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=149432853
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        Value: 10.1002/adem.202000901
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        Text: English
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        PageCount: 9
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      – TitleFull: Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
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              Text: Mar2021
              Type: published
              Y: 2021
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