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Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures.

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Title: Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures.
Authors: Selvidge, Jennifer1, Hughes, Eamonn T.1, Norman, Justin C.2, Shang, Chen1, Kennedy, M. J.3, Dumont, Mario3, Netherton, Andrew M.3, Zhang, Zeyu3, Herrick, Robert W.4, Bowers, John E.1,3, Mukherjee, Kunal5
Source: Applied Physics Letters; 5/21/2021, Vol. 118 Issue 19, p1-7, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 150294319
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PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 5/21/2021, Vol. 118 Issue 19, p1-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=150294319
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        Value: 10.1063/5.0052316
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              Text: 5/21/2021
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              Y: 2021
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