Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg.
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| Title: | Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg. |
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| Authors: | Shima, K.1, kshima@tohoku.ac.jp, Tanaka, R.2, Takashima, S.2, Ueno, K.2, Edo, M.2, Kojima, K.1, Uedono, A.3, Ishibashi, S.4, Chichibu, S. F.1, chichibulab@yahoo.co.jp |
| Source: | Applied Physics Letters; 11/1/2021, Vol. 119 Issue 18, p1-7, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/5.0066347 |
