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Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg.

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Title: Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg.
Authors: Shima, K.1, kshima@tohoku.ac.jp, Tanaka, R.2, Takashima, S.2, Ueno, K.2, Edo, M.2, Kojima, K.1, Uedono, A.3, Ishibashi, S.4, Chichibu, S. F.1, chichibulab@yahoo.co.jp
Source: Applied Physics Letters; 11/1/2021, Vol. 119 Issue 18, p1-7, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 153441152
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Shima%2C+K%2E%22">Shima, K.</searchLink><relatesTo>1</relatesTo>, <i>kshima@tohoku.ac.jp</i><br /><searchLink fieldCode="AU" term="%22Tanaka%2C+R%2E%22">Tanaka, R.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Takashima%2C+S%2E%22">Takashima, S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ueno%2C+K%2E%22">Ueno, K.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Edo%2C+M%2E%22">Edo, M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Kojima%2C+K%2E%22">Kojima, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Uedono%2C+A%2E%22">Uedono, A.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Ishibashi%2C+S%2E%22">Ishibashi, S.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Chichibu%2C+S%2E+F%2E%22">Chichibu, S. F.</searchLink><relatesTo>1</relatesTo>, <i>chichibulab@yahoo.co.jp</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 11/1/2021, Vol. 119 Issue 18, p1-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=153441152
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0066347
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 1
    Titles:
      – TitleFull: Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Shima, K.
      – PersonEntity:
          Name:
            NameFull: Tanaka, R.
      – PersonEntity:
          Name:
            NameFull: Takashima, S.
      – PersonEntity:
          Name:
            NameFull: Ueno, K.
      – PersonEntity:
          Name:
            NameFull: Edo, M.
      – PersonEntity:
          Name:
            NameFull: Kojima, K.
      – PersonEntity:
          Name:
            NameFull: Uedono, A.
      – PersonEntity:
          Name:
            NameFull: Ishibashi, S.
      – PersonEntity:
          Name:
            NameFull: Chichibu, S. F.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 11
              Text: 11/1/2021
              Type: published
              Y: 2021
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 119
            – Type: issue
              Value: 18
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1