Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.
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| Title: | Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer. |
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| Authors: | Du, Fangzhou1, Jiang, Yang1, Qiao, Zepeng1, Wu, Zhanxia2, Tang, Chuying1, He, Jiaqi1, Zhou, Guangnan1, Cheng, Wei-Chih1, Tang, Xinyi1, Wang, Qing1,3,4, wangq7@sustech.edu.cn, Yu, Hongyu1,3,4, yuhy@sustech.edu.cn |
| Source: | Materials Science in Semiconductor Processing; Jun2022, Vol. 143, pN.PAG-N.PAG, 1p |
| Database: | Applied Science & Technology Source |
| ISSN: | 13698001 |
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| DOI: | 10.1016/j.mssp.2022.106544 |
