APA (7th ed.) Citation

Du, F., Jiang, Y., Qiao, Z., Wu, Z., Tang, C., He, J., . . . Yu, H. (2022). Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer. Materials Science in Semiconductor Processing, 143, N.PAG. https://doi.org/10.1016/j.mssp.2022.106544

Chicago Style (17th ed.) Citation

Du, Fangzhou, et al. "Atomic Layer Etching Technique for InAlN/GaN Heterostructure with AlN Etch-stop Layer." Materials Science in Semiconductor Processing 143 (2022): N.PAG. https://doi.org/10.1016/j.mssp.2022.106544.

MLA (9th ed.) Citation

Du, Fangzhou, et al. "Atomic Layer Etching Technique for InAlN/GaN Heterostructure with AlN Etch-stop Layer." Materials Science in Semiconductor Processing, vol. 143, 2022, p. N.PAG, https://doi.org/10.1016/j.mssp.2022.106544.