Mg-doping and free-hole properties of hot-wall MOCVD GaN.
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| Title: | Mg-doping and free-hole properties of hot-wall MOCVD GaN. |
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| Authors: | Papamichail, A.1,2, alexis.papamichail@liu.se, Kakanakova-Georgieva, A.1, Sveinbjörnsson, E. Ö.1,3, Persson, A. R.1,4, Hult, B.5, Rorsman, N.5, Stanishev, V.2, Le, S. P.1, Persson, P. O. Å.4, Nawaz, M.6, Chen, J. T.1,7, Paskov, P. P.1, Darakchieva, V.1,2,8 |
| Source: | Journal of Applied Physics; 4/30/2022, Vol. 131 Issue 18, p1-10, 10p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/5.0089406 |
