APA (7th ed.) Citation

Papamichail, A., Kakanakova-Georgieva, A., Sveinbjörnsson, E. Ö., Persson, A. R., Hult, B., Rorsman, N., . . . Darakchieva, V. (2022). Mg-doping and free-hole properties of hot-wall MOCVD GaN. Journal of Applied Physics, 131(18), 1. https://doi.org/10.1063/5.0089406

Chicago Style (17th ed.) Citation

Papamichail, A., et al. "Mg-doping and Free-hole Properties of Hot-wall MOCVD GaN." Journal of Applied Physics 131, no. 18 (2022): 1. https://doi.org/10.1063/5.0089406.

MLA (9th ed.) Citation

Papamichail, A., et al. "Mg-doping and Free-hole Properties of Hot-wall MOCVD GaN." Journal of Applied Physics, vol. 131, no. 18, 2022, p. 1, https://doi.org/10.1063/5.0089406.