Mg-doping and free-hole properties of hot-wall MOCVD GaN.
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| Title: | Mg-doping and free-hole properties of hot-wall MOCVD GaN. |
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| Authors: | Papamichail, A.1,2, alexis.papamichail@liu.se, Kakanakova-Georgieva, A.1, Sveinbjörnsson, E. Ö.1,3, Persson, A. R.1,4, Hult, B.5, Rorsman, N.5, Stanishev, V.2, Le, S. P.1, Persson, P. O. Å.4, Nawaz, M.6, Chen, J. T.1,7, Paskov, P. P.1, Darakchieva, V.1,2,8 |
| Source: | Journal of Applied Physics; 4/30/2022, Vol. 131 Issue 18, p1-10, 10p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 156861329 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=156861329 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/5.0089406 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 1 Titles: – TitleFull: Mg-doping and free-hole properties of hot-wall MOCVD GaN. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Papamichail, A. – PersonEntity: Name: NameFull: Kakanakova-Georgieva, A. – PersonEntity: Name: NameFull: Sveinbjörnsson, E. Ö. – PersonEntity: Name: NameFull: Persson, A. R. – PersonEntity: Name: NameFull: Hult, B. – PersonEntity: Name: NameFull: Rorsman, N. – PersonEntity: Name: NameFull: Stanishev, V. – PersonEntity: Name: NameFull: Le, S. P. – PersonEntity: Name: NameFull: Persson, P. O. Å. – PersonEntity: Name: NameFull: Nawaz, M. – PersonEntity: Name: NameFull: Chen, J. T. – PersonEntity: Name: NameFull: Paskov, P. P. – PersonEntity: Name: NameFull: Darakchieva, V. IsPartOfRelationships: – BibEntity: Dates: – D: 30 M: 04 Text: 4/30/2022 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 00218979 Numbering: – Type: volume Value: 131 – Type: issue Value: 18 Titles: – TitleFull: Journal of Applied Physics Type: main |
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