The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure.
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| Title: | The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure. |
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| Authors: | Du, Fangzhou1, 11811803@mail.sustech.edu.cn, Jiang, Yang1, 11510044@mail.sustech.edu.cn, Wu, Zhanxia2, wuzhanxia@sgitg.sgcc.com.cn, Lu, Honghao1, 12032648@mail.sustech.edu.cn, He, Jiaqi1, hjq447052447@163.com, Tang, Chuying1, 12049024@mail.sustech.edu.cn, Hu, Qiaoyu1, 11930627@mail.sustech.edu.cn, Wen, Kangyao1, 19212020080@fudan.edu.cn, Tang, Xinyi1, 11810232@mail.sustech.edu.cn, Hong, Haimin2, honghaimin@sgitg.sgcc.com.cn, Yu, Hongyu1,3,4, yuhy@sustech.edu.cn, Wang, Qing1,3,4, wangq7@sustech.edu.cn |
| Source: | Crystals (2073-4352); May2022, Vol. 12 Issue 5, pN.PAG-N.PAG, 11p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 20734352 |
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| DOI: | 10.3390/cryst12050722 |
