APA (7th ed.) Citation

Du, F., Jiang, Y., Wu, Z., Lu, H., He, J., Tang, C., . . . Wang, Q. (2022). The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure. Crystals (2073-4352), 12(5), N.PAG. https://doi.org/10.3390/cryst12050722

Chicago Style (17th ed.) Citation

Du, Fangzhou, et al. "The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure." Crystals (2073-4352) 12, no. 5 (2022): N.PAG. https://doi.org/10.3390/cryst12050722.

MLA (9th ed.) Citation

Du, Fangzhou, et al. "The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure." Crystals (2073-4352), vol. 12, no. 5, 2022, p. N.PAG, https://doi.org/10.3390/cryst12050722.