Bibliographic Details
| Title: |
Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate. |
| Authors: |
Kuo, Ting-Tzu1, Chen, Ying-Chung1, tcchang3708@gmail.com, Chang, Ting-Chang2,3, ycc@mail.ee.nsysu.edu.tw, Tai, Mao-Chou4, Wang, Yu-Xuan5, Chen, Kuan-Hsu2, Lin, Yu-Shan2, Ciou, Fong-Min2, Jin, Fu-Yuan2, Chang, Kai-Chun2, Hung, Wei-Chun2, Chang, Yen-Cheng2, Yeh, Chien-Hung4 |
| Source: |
Applied Physics Letters; 6/6/2022, Vol. 120 Issue 23, p1-5, 5p |
| Database: |
Applied Science & Technology Source |
