Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate.

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Bibliographic Details
Title: Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate.
Authors: Wang, Kejia1, Song, Yuzi1, Zhang, Yichun1, Zhang, Yunyan1, yunyanzhang@zju.edu.cn, Cheng, Zhiyuan1, zycheng@zju.edu.cn
Source: Nanoscale Research Letters; 10/15/2022, Vol. 17 Issue 1, p1-6, 6p
Database: Applied Science & Technology Source
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ISSN:19317573
DOI:10.1186/s11671-022-03732-1