Formation mechanism and reliability of preferred growth full Cu6Sn5 intermetallic compound interconnect on (011) Cu single-crystal substrate.
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| Title: | Formation mechanism and reliability of preferred growth full Cu6Sn5 intermetallic compound interconnect on (011) Cu single-crystal substrate. |
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| Authors: | Huang, M. L.1, huang@dlut.edu.cn, Zou, L.1, Wu, Y.1 |
| Source: | Journal of Materials Science: Materials in Electronics; Nov2022, Vol. 33 Issue 33, p25274-25284, 11p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-022-09234-1 |
