APA (7th ed.) Citation

Huang, M. L., Zou, L., & Wu, Y. (2022). Formation mechanism and reliability of preferred growth full Cu6Sn5 intermetallic compound interconnect on (011) Cu single-crystal substrate. Journal of Materials Science: Materials in Electronics, 33(33), 25274. https://doi.org/10.1007/s10854-022-09234-1

Chicago Style (17th ed.) Citation

Huang, M. L., L. Zou, and Y. Wu. "Formation Mechanism and Reliability of Preferred Growth Full Cu6Sn5 Intermetallic Compound Interconnect on (011) Cu Single-crystal Substrate." Journal of Materials Science: Materials in Electronics 33, no. 33 (2022): 25274. https://doi.org/10.1007/s10854-022-09234-1.

MLA (9th ed.) Citation

Huang, M. L., et al. "Formation Mechanism and Reliability of Preferred Growth Full Cu6Sn5 Intermetallic Compound Interconnect on (011) Cu Single-crystal Substrate." Journal of Materials Science: Materials in Electronics, vol. 33, no. 33, 2022, p. 25274, https://doi.org/10.1007/s10854-022-09234-1.