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Formation mechanism and reliability of preferred growth full Cu6Sn5 intermetallic compound interconnect on (011) Cu single-crystal substrate.

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Title: Formation mechanism and reliability of preferred growth full Cu6Sn5 intermetallic compound interconnect on (011) Cu single-crystal substrate.
Authors: Huang, M. L.1, huang@dlut.edu.cn, Zou, L.1, Wu, Y.1
Source: Journal of Materials Science: Materials in Electronics; Nov2022, Vol. 33 Issue 33, p25274-25284, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 160308590
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Formation mechanism and reliability of preferred growth full Cu6Sn5 intermetallic compound interconnect on (011) Cu single-crystal substrate.
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-022-09234-1
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 25274
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      – TitleFull: Formation mechanism and reliability of preferred growth full Cu6Sn5 intermetallic compound interconnect on (011) Cu single-crystal substrate.
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            NameFull: Huang, M. L.
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            NameFull: Zou, L.
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            NameFull: Wu, Y.
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              Text: Nov2022
              Type: published
              Y: 2022
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              Value: 33
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              Value: 33
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