Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates.

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Bibliographic Details
Title: Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates.
Authors: Liu, Jinyang1, Li, Zhengyuan2, Hao, Weibing1, Mu, Wenxiang2, mwx@sdu.edu.cn, He, Qiming1, Zhou, Xuanze1, Zhao, Xiaolong1, Xu, Guangwei1, xugw@ustc.edu.cn, Jia, Zhitai2, Tao, Xutang2, Long, Shibing1, shibinglong@ustc.edu.cn
Source: IEEE Electron Device Letters; Dec2022, Vol. 43 Issue 12, p2061-2064, 4p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2022.3219073