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Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates.

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Title: Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates.
Authors: Liu, Jinyang1, Li, Zhengyuan2, Hao, Weibing1, Mu, Wenxiang2, mwx@sdu.edu.cn, He, Qiming1, Zhou, Xuanze1, Zhao, Xiaolong1, Xu, Guangwei1, xugw@ustc.edu.cn, Jia, Zhitai2, Tao, Xutang2, Long, Shibing1, shibinglong@ustc.edu.cn
Source: IEEE Electron Device Letters; Dec2022, Vol. 43 Issue 12, p2061-2064, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 160687732
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates.
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  Data: <searchLink fieldCode="AU" term="%22Liu%2C+Jinyang%22">Liu, Jinyang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Zhengyuan%22">Li, Zhengyuan</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Hao%2C+Weibing%22">Hao, Weibing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Mu%2C+Wenxiang%22">Mu, Wenxiang</searchLink><relatesTo>2</relatesTo>, <i>mwx@sdu.edu.cn</i><br /><searchLink fieldCode="AU" term="%22He%2C+Qiming%22">He, Qiming</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhou%2C+Xuanze%22">Zhou, Xuanze</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhao%2C+Xiaolong%22">Zhao, Xiaolong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Xu%2C+Guangwei%22">Xu, Guangwei</searchLink><relatesTo>1</relatesTo>, <i>xugw@ustc.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Jia%2C+Zhitai%22">Jia, Zhitai</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Tao%2C+Xutang%22">Tao, Xutang</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Long%2C+Shibing%22">Long, Shibing</searchLink><relatesTo>1</relatesTo>, <i>shibinglong@ustc.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Dec2022, Vol. 43 Issue 12, p2061-2064, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=160687732
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      – Type: doi
        Value: 10.1109/LED.2022.3219073
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      – TitleFull: Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates.
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            – D: 01
              M: 12
              Text: Dec2022
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              Y: 2022
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