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Correlation of 2D-interface defect density and electrical parameters of a GZO/p-Si heterojunctions: application to three surface morphologies.

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Bibliographic Details
Title: Correlation of 2D-interface defect density and electrical parameters of a GZO/p-Si heterojunctions: application to three surface morphologies.
Authors: Alaya, C. Ben1, Dridi Rezgui, B.1, Chaabouni, F.2, Khalfallah, B.2, Aouida, S.1, Bouaïcha, M.1, Mongi.Bouaicha@crten.rnrt.tn
Source: Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-18, 18p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-022-09537-3