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Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties.

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Bibliographic Details
Title: Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties.
Authors: Pitsch, Stefan A.1,2, Sumathi, R. Radhakrishnan1, sumathi@lrz.uni-muenchen.de
Source: Crystals (2073-4352); Feb2023, Vol. 13 Issue 2, p189, 18p
Database: Applied Science & Technology Source
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ISSN:20734352
DOI:10.3390/cryst13020189