APA (7th ed.) Citation

Pitsch, S. A., & Sumathi, R. R. (2023). Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties. Crystals (2073-4352), 13(2), 189. https://doi.org/10.3390/cryst13020189

Chicago Style (17th ed.) Citation

Pitsch, Stefan A., and R. Radhakrishnan Sumathi. "Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties." Crystals (2073-4352) 13, no. 2 (2023): 189. https://doi.org/10.3390/cryst13020189.

MLA (9th ed.) Citation

Pitsch, Stefan A., and R. Radhakrishnan Sumathi. "Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties." Crystals (2073-4352), vol. 13, no. 2, 2023, p. 189, https://doi.org/10.3390/cryst13020189.