Bibliographic Details
| Title: |
3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories. |
| Authors: |
Zhang, Yuqing1, yzhangir@connect.ust.hk, Li, Jiye2, Li, Jinxiong3, Huang, Tengyan2, Guan, Yuhang2, Zhang, Yuhan2, Yang, Huan2, Chan, Mansun1, Wang, Xinwei3, wangxw@pkusz.edu.cn, Lu, Lei2, lulei@pku.edu.cn, Zhang, Shengdong2, zhangsd@pku.edu.cn |
| Source: |
Advanced Electronic Materials; Aug2023, Vol. 9 Issue 8, p1-9, 9p |
| Database: |
Applied Science & Technology Source |
