APA (7th ed.) Citation

Zhang, Y., Li, J., Li, J., Huang, T., Guan, Y., Zhang, Y., . . . Zhang, S. (2023). 3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories. Advanced Electronic Materials, 9(8), 1. https://doi.org/10.1002/aelm.202300150

Chicago Style (17th ed.) Citation

Zhang, Yuqing, et al. "3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories." Advanced Electronic Materials 9, no. 8 (2023): 1. https://doi.org/10.1002/aelm.202300150.

MLA (9th ed.) Citation

Zhang, Yuqing, et al. "3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories." Advanced Electronic Materials, vol. 9, no. 8, 2023, p. 1, https://doi.org/10.1002/aelm.202300150.