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3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories.

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Title: 3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories.
Authors: Zhang, Yuqing1, yzhangir@connect.ust.hk, Li, Jiye2, Li, Jinxiong3, Huang, Tengyan2, Guan, Yuhang2, Zhang, Yuhan2, Yang, Huan2, Chan, Mansun1, Wang, Xinwei3, wangxw@pkusz.edu.cn, Lu, Lei2, lulei@pku.edu.cn, Zhang, Shengdong2, zhangsd@pku.edu.cn
Source: Advanced Electronic Materials; Aug2023, Vol. 9 Issue 8, p1-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 169874512
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: 3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories.
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  Data: <searchLink fieldCode="AU" term="%22Zhang%2C+Yuqing%22">Zhang, Yuqing</searchLink><relatesTo>1</relatesTo>, <i>yzhangir@connect.ust.hk</i><br /><searchLink fieldCode="AU" term="%22Li%2C+Jiye%22">Li, Jiye</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Jinxiong%22">Li, Jinxiong</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Huang%2C+Tengyan%22">Huang, Tengyan</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Guan%2C+Yuhang%22">Guan, Yuhang</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Yuhan%22">Zhang, Yuhan</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Yang%2C+Huan%22">Yang, Huan</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Chan%2C+Mansun%22">Chan, Mansun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Xinwei%22">Wang, Xinwei</searchLink><relatesTo>3</relatesTo>, <i>wangxw@pkusz.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Lu%2C+Lei%22">Lu, Lei</searchLink><relatesTo>2</relatesTo>, <i>lulei@pku.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Shengdong%22">Zhang, Shengdong</searchLink><relatesTo>2</relatesTo>, <i>zhangsd@pku.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Electronic+Materials%22">Advanced Electronic Materials</searchLink>; Aug2023, Vol. 9 Issue 8, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=169874512
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        Value: 10.1002/aelm.202300150
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      – TitleFull: 3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories.
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              Text: Aug2023
              Type: published
              Y: 2023
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