Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs.
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| Title: | Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs. |
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| Authors: | Dinçer, Ahmet Serhat1,2, asdincer@bilkent.edu.tr, Haliloğlu, Mehmet Taha1,2, Toprak, Ahmet2, Altındal, Şemsettin3, Özbay, Ekmel2,4,5 |
| Source: | Journal of Materials Science: Materials in Electronics; Aug2023, Vol. 34 Issue 23, p1-8, 8p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-023-11077-3 |
