APA (7th ed.) Citation

Dinçer, A. S., Haliloğlu, M. T., Toprak, A., Altındal, Ş., & Özbay, E. (2023). Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs. Journal of Materials Science: Materials in Electronics, 34(23), 1. https://doi.org/10.1007/s10854-023-11077-3

Chicago Style (17th ed.) Citation

Dinçer, Ahmet Serhat, Mehmet Taha Haliloğlu, Ahmet Toprak, Şemsettin Altındal, and Ekmel Özbay. "Effect of Si-rich SiXNY Multilayer Passivation Material on the DC Electrical Characteristics of AlGaN/GaN HEMTs." Journal of Materials Science: Materials in Electronics 34, no. 23 (2023): 1. https://doi.org/10.1007/s10854-023-11077-3.

MLA (9th ed.) Citation

Dinçer, Ahmet Serhat, et al. "Effect of Si-rich SiXNY Multilayer Passivation Material on the DC Electrical Characteristics of AlGaN/GaN HEMTs." Journal of Materials Science: Materials in Electronics, vol. 34, no. 23, 2023, p. 1, https://doi.org/10.1007/s10854-023-11077-3.