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Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs.

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Title: Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs.
Authors: Dinçer, Ahmet Serhat1,2, asdincer@bilkent.edu.tr, Haliloğlu, Mehmet Taha1,2, Toprak, Ahmet2, Altındal, Şemsettin3, Özbay, Ekmel2,4,5
Source: Journal of Materials Science: Materials in Electronics; Aug2023, Vol. 34 Issue 23, p1-8, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 170380928
AccessLevel: 2
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PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Dinçer%2C+Ahmet+Serhat%22">Dinçer, Ahmet Serhat</searchLink><relatesTo>1,2</relatesTo>, <i>asdincer@bilkent.edu.tr</i><br /><searchLink fieldCode="AU" term="%22Haliloğlu%2C+Mehmet+Taha%22">Haliloğlu, Mehmet Taha</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Toprak%2C+Ahmet%22">Toprak, Ahmet</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Altındal%2C+Şemsettin%22">Altındal, Şemsettin</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Özbay%2C+Ekmel%22">Özbay, Ekmel</searchLink><relatesTo>2,4,5</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Aug2023, Vol. 34 Issue 23, p1-8, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=170380928
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-023-11077-3
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1
    Titles:
      – TitleFull: Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Dinçer, Ahmet Serhat
      – PersonEntity:
          Name:
            NameFull: Haliloğlu, Mehmet Taha
      – PersonEntity:
          Name:
            NameFull: Toprak, Ahmet
      – PersonEntity:
          Name:
            NameFull: Altındal, Şemsettin
      – PersonEntity:
          Name:
            NameFull: Özbay, Ekmel
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 11
              M: 08
              Text: Aug2023
              Type: published
              Y: 2023
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 34
            – Type: issue
              Value: 23
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1