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Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C.

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Bibliographic Details
Title:	Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C.
Authors:	Yalçın, Yeşim¹, Arslan, Öznur^1,2, İldeş, Caner³, Çokduygulular, Erman⁴, Çetinkaya, Çağlar², Kınacı, Barış^5,6, bariskinaci@gazi.edu.tr
Source:	Journal of Materials Science: Materials in Electronics; Sep2023, Vol. 34 Issue 25, p1-10, 10p
Database:	Applied Science & Technology Source
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Description
ISSN:	09574522
DOI:	10.1007/s10854-023-11222-y