A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses.
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| Title: | A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses. |
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| Authors: | Wada, Tomoki1,2, Nishioka, Daiki1,2, Namiki, Wataru1, Tsuchiya, Takashi1,2, tsuchiya.takashi@nims.go.jp, Higuchi, Tohru2, Terabe, Kazuya1 |
| Source: | Advanced Intelligent Systems (2640-4567); Sep2023, Vol. 5 Issue 9, p1-12, 12p |
| Database: | Applied Science & Technology Source |
| ISSN: | 26404567 |
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| DOI: | 10.1002/aisy.202300123 |
