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A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses.

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Title: A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses.
Authors: Wada, Tomoki1,2, Nishioka, Daiki1,2, Namiki, Wataru1, Tsuchiya, Takashi1,2, tsuchiya.takashi@nims.go.jp, Higuchi, Tohru2, Terabe, Kazuya1
Source: Advanced Intelligent Systems (2640-4567); Sep2023, Vol. 5 Issue 9, p1-12, 12p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 172302977
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=172302977
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        Value: 10.1002/aisy.202300123
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      – Code: eng
        Text: English
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        PageCount: 12
        StartPage: 1
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      – TitleFull: A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses.
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            NameFull: Wada, Tomoki
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            NameFull: Nishioka, Daiki
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            NameFull: Namiki, Wataru
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            NameFull: Tsuchiya, Takashi
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            NameFull: Higuchi, Tohru
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            NameFull: Terabe, Kazuya
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            – D: 01
              M: 09
              Text: Sep2023
              Type: published
              Y: 2023
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