Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.
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| Title: | Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C. |
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| Authors: | Steiner, Johannes1, shouzhong.wang@fau.de, Schultheiß, Jana1, Wang, Shouzhong1, Wellmann, Peter J.1, peter.wellmann@fau.de |
| Source: | Crystals (2073-4352); Nov2023, Vol. 13 Issue 11, p1590, 9p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 20734352 |
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| DOI: | 10.3390/cryst13111590 |
