APA (7th ed.) Citation

Steiner, J., Schultheiß, J., Wang, S., & Wellmann, P. J. (2023). Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C. Crystals (2073-4352), 13(11), 1590. https://doi.org/10.3390/cryst13111590

Chicago Style (17th ed.) Citation

Steiner, Johannes, Jana Schultheiß, Shouzhong Wang, and Peter J. Wellmann. "Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C." Crystals (2073-4352) 13, no. 11 (2023): 1590. https://doi.org/10.3390/cryst13111590.

MLA (9th ed.) Citation

Steiner, Johannes, et al. "Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C." Crystals (2073-4352), vol. 13, no. 11, 2023, p. 1590, https://doi.org/10.3390/cryst13111590.