Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.

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Title: Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.
Authors: Steiner, Johannes1, shouzhong.wang@fau.de, Schultheiß, Jana1, Wang, Shouzhong1, Wellmann, Peter J.1, peter.wellmann@fau.de
Source: Crystals (2073-4352); Nov2023, Vol. 13 Issue 11, p1590, 9p
Database: Applied Science & Technology Source
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  Data: Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.
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  Data: <searchLink fieldCode="AU" term="%22Steiner%2C+Johannes%22">Steiner, Johannes</searchLink><relatesTo>1</relatesTo>, <i>shouzhong.wang@fau.de</i><br /><searchLink fieldCode="AU" term="%22Schultheiß%2C+Jana%22">Schultheiß, Jana</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Shouzhong%22">Wang, Shouzhong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wellmann%2C+Peter+J%2E%22">Wellmann, Peter J.</searchLink><relatesTo>1</relatesTo>, <i>peter.wellmann@fau.de</i>
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  Data: <searchLink fieldCode="JN" term="%22Crystals+%282073-4352%29%22">Crystals (2073-4352)</searchLink>; Nov2023, Vol. 13 Issue 11, p1590, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=173827774
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        Value: 10.3390/cryst13111590
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        Text: English
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      – TitleFull: Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.
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              Text: Nov2023
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              Y: 2023
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