Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.
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| Title: | Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C. |
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| Authors: | Steiner, Johannes1, shouzhong.wang@fau.de, Schultheiß, Jana1, Wang, Shouzhong1, Wellmann, Peter J.1, peter.wellmann@fau.de |
| Source: | Crystals (2073-4352); Nov2023, Vol. 13 Issue 11, p1590, 9p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 173827774 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=173827774 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/cryst13111590 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1590 Titles: – TitleFull: Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Steiner, Johannes – PersonEntity: Name: NameFull: Schultheiß, Jana – PersonEntity: Name: NameFull: Wang, Shouzhong – PersonEntity: Name: NameFull: Wellmann, Peter J. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 20734352 Numbering: – Type: volume Value: 13 – Type: issue Value: 11 Titles: – TitleFull: Crystals (2073-4352) Type: main |
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