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Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments.

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Bibliographic Details
Title: Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments.
Authors: Luo, Shisong1, Fu, Kai1,2,3, kai.fu@utah.edu, Xie, Qingyun4, Yuan, Mengyang4, Gao, Guanhui5, Guo, Hua5, Xu, Rui6, Giles, Noah1, Li, Tao1, Mei, Zhaobo1, Xu, Mingfei1, Zhou, Jingan1,2, He, Ziyi2, Chang, Cheng1, Zhu, Hanyu6, Palacios, Tomás4, Zhao, Yuji1,2, yuji.zhao@rice.edu
Source: Applied Physics Letters; 12/11/2023, Vol. 123 Issue 24, p1-6, 6p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0173535