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Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments.

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Title: Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments.
Authors: Luo, Shisong1, Fu, Kai1,2,3, kai.fu@utah.edu, Xie, Qingyun4, Yuan, Mengyang4, Gao, Guanhui5, Guo, Hua5, Xu, Rui6, Giles, Noah1, Li, Tao1, Mei, Zhaobo1, Xu, Mingfei1, Zhou, Jingan1,2, He, Ziyi2, Chang, Cheng1, Zhu, Hanyu6, Palacios, Tomás4, Zhao, Yuji1,2, yuji.zhao@rice.edu
Source: Applied Physics Letters; 12/11/2023, Vol. 123 Issue 24, p1-6, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 174274052
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 12/11/2023, Vol. 123 Issue 24, p1-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=174274052
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        Value: 10.1063/5.0173535
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        Text: English
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              Text: 12/11/2023
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