Son, H. J., Efremov, A., Choi, G., & Kwon, K. (2024). Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System. Plasma Chemistry & Plasma Processing, 44(1), 635. https://doi.org/10.1007/s11090-023-10363-6
Chicago Style (17th ed.) CitationSon, Hye Jun, Alexander Efremov, Gilyoung Choi, and Kwang-Ho Kwon. "Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System." Plasma Chemistry & Plasma Processing 44, no. 1 (2024): 635. https://doi.org/10.1007/s11090-023-10363-6.
MLA (9th ed.) CitationSon, Hye Jun, et al. "Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System." Plasma Chemistry & Plasma Processing, vol. 44, no. 1, 2024, p. 635, https://doi.org/10.1007/s11090-023-10363-6.