Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System.

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Title: Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System.
Authors: Son, Hye Jun1, Efremov, Alexander2, Choi, Gilyoung1, Kwon, Kwang-Ho1, kwonkh@korea.ac.kr
Source: Plasma Chemistry & Plasma Processing; Jan2024, Vol. 44 Issue 1, p635-649, 15p
Database: Applied Science & Technology Source
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An: 174839703
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  Data: Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System.
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  Data: <searchLink fieldCode="AU" term="%22Son%2C+Hye+Jun%22">Son, Hye Jun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Efremov%2C+Alexander%22">Efremov, Alexander</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Choi%2C+Gilyoung%22">Choi, Gilyoung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kwon%2C+Kwang-Ho%22">Kwon, Kwang-Ho</searchLink><relatesTo>1</relatesTo>, <i>kwonkh@korea.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Plasma+Chemistry+%26+Plasma+Processing%22">Plasma Chemistry & Plasma Processing</searchLink>; Jan2024, Vol. 44 Issue 1, p635-649, 15p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s11090-023-10363-6
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      – Code: eng
        Text: English
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      – TitleFull: Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System.
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              Text: Jan2024
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              Y: 2024
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