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Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory.

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Bibliographic Details
Title: Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory.
Authors: Du, Yihang1, YihangDu@hhgrace.com, Gu, Lin1, Wang, Zhuangzhuang1, Yao, Chun1, Mu, Xiaodong1, Zhong, Dongling1
Source: Journal of Materials Science: Materials in Electronics; Jan2024, Vol. 35 Issue 2, p1-8, 8p
Database: Applied Science & Technology Source
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Description
ISSN:09574522
DOI:10.1007/s10854-023-11889-3