APA (7th ed.) Citation

Du, Y., Gu, L., Wang, Z., Yao, C., Mu, X., & Zhong, D. (2024). Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory. Journal of Materials Science: Materials in Electronics, 35(2), 1. https://doi.org/10.1007/s10854-023-11889-3

Chicago Style (17th ed.) Citation

Du, Yihang, Lin Gu, Zhuangzhuang Wang, Chun Yao, Xiaodong Mu, and Dongling Zhong. "Investigation of Impact of Floating Gate Implantation Annealing on the Characteristics of 4Xnm ETOX NOR-flash Memory." Journal of Materials Science: Materials in Electronics 35, no. 2 (2024): 1. https://doi.org/10.1007/s10854-023-11889-3.

MLA (9th ed.) Citation

Du, Yihang, et al. "Investigation of Impact of Floating Gate Implantation Annealing on the Characteristics of 4Xnm ETOX NOR-flash Memory." Journal of Materials Science: Materials in Electronics, vol. 35, no. 2, 2024, p. 1, https://doi.org/10.1007/s10854-023-11889-3.