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Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory.

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Title: Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory.
Authors: Du, Yihang1, YihangDu@hhgrace.com, Gu, Lin1, Wang, Zhuangzhuang1, Yao, Chun1, Mu, Xiaodong1, Zhong, Dongling1
Source: Journal of Materials Science: Materials in Electronics; Jan2024, Vol. 35 Issue 2, p1-8, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 174963190
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Du%2C+Yihang%22">Du, Yihang</searchLink><relatesTo>1</relatesTo>, <i>YihangDu@hhgrace.com</i><br /><searchLink fieldCode="AU" term="%22Gu%2C+Lin%22">Gu, Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Zhuangzhuang%22">Wang, Zhuangzhuang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yao%2C+Chun%22">Yao, Chun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Mu%2C+Xiaodong%22">Mu, Xiaodong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhong%2C+Dongling%22">Zhong, Dongling</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jan2024, Vol. 35 Issue 2, p1-8, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=174963190
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-023-11889-3
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1
    Titles:
      – TitleFull: Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Du, Yihang
      – PersonEntity:
          Name:
            NameFull: Gu, Lin
      – PersonEntity:
          Name:
            NameFull: Wang, Zhuangzhuang
      – PersonEntity:
          Name:
            NameFull: Yao, Chun
      – PersonEntity:
          Name:
            NameFull: Mu, Xiaodong
      – PersonEntity:
          Name:
            NameFull: Zhong, Dongling
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 11
              M: 01
              Text: Jan2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 35
            – Type: issue
              Value: 2
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1