Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory.
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| Title: | Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory. |
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| Authors: | Du, Yihang1, YihangDu@hhgrace.com, Gu, Lin1, Wang, Zhuangzhuang1, Yao, Chun1, Mu, Xiaodong1, Zhong, Dongling1 |
| Source: | Journal of Materials Science: Materials in Electronics; Jan2024, Vol. 35 Issue 2, p1-8, 8p |
| Database: | Applied Science & Technology Source |
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