Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy.
Saved in:
| Title: | Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy. |
|---|---|
| Authors: | Kimura, T.1, taishi@mosk.tytlabs.co.jp, Shimazu, H.1, Kataoka, K.1, Itoh, K.1, Narita, T.1, Uedono, A.2, Tokuda, Y.3, Tanaka, D.4, Nitta, S.4, Amano, H.4, Nakamura, D.1 |
| Source: | Applied Physics Letters; 1/29/2024, Vol. 124 Issue 5, p1-6, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
|---|---|
| DOI: | 10.1063/5.0191774 |
