Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy.
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| Title: | Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy. |
|---|---|
| Authors: | Kimura, T.1, taishi@mosk.tytlabs.co.jp, Shimazu, H.1, Kataoka, K.1, Itoh, K.1, Narita, T.1, Uedono, A.2, Tokuda, Y.3, Tanaka, D.4, Nitta, S.4, Amano, H.4, Nakamura, D.1 |
| Source: | Applied Physics Letters; 1/29/2024, Vol. 124 Issue 5, p1-6, 6p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 175232137 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Kimura%2C+T%2E%22">Kimura, T.</searchLink><relatesTo>1</relatesTo>, <i>taishi@mosk.tytlabs.co.jp</i><br /><searchLink fieldCode="AU" term="%22Shimazu%2C+H%2E%22">Shimazu, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kataoka%2C+K%2E%22">Kataoka, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Itoh%2C+K%2E%22">Itoh, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Narita%2C+T%2E%22">Narita, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Uedono%2C+A%2E%22">Uedono, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Tokuda%2C+Y%2E%22">Tokuda, Y.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Tanaka%2C+D%2E%22">Tanaka, D.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Nitta%2C+S%2E%22">Nitta, S.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Amano%2C+H%2E%22">Amano, H.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Nakamura%2C+D%2E%22">Nakamura, D.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 1/29/2024, Vol. 124 Issue 5, p1-6, 6p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=175232137 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/5.0191774 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 1 Titles: – TitleFull: Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kimura, T. – PersonEntity: Name: NameFull: Shimazu, H. – PersonEntity: Name: NameFull: Kataoka, K. – PersonEntity: Name: NameFull: Itoh, K. – PersonEntity: Name: NameFull: Narita, T. – PersonEntity: Name: NameFull: Uedono, A. – PersonEntity: Name: NameFull: Tokuda, Y. – PersonEntity: Name: NameFull: Tanaka, D. – PersonEntity: Name: NameFull: Nitta, S. – PersonEntity: Name: NameFull: Amano, H. – PersonEntity: Name: NameFull: Nakamura, D. IsPartOfRelationships: – BibEntity: Dates: – D: 29 M: 01 Text: 1/29/2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 124 – Type: issue Value: 5 Titles: – TitleFull: Applied Physics Letters Type: main |
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