High-density via RRAM cell with multi-level setting by current compliance circuits.
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| Title: | High-density via RRAM cell with multi-level setting by current compliance circuits. |
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| Authors: | Hsieh, Yu-Cheng1, Lin, Yu-Cheng1, Huang, Yao-Hung1, Chih, Yu-Der2, Chang, Jonathan2, Lin, Chrong-Jung1, King, Ya-Chin1, ycking@ee.nthu.edu.tw |
| Source: | Discover Nano; 3/25/2024, Vol. 19 Issue 1, p1-8, 8p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 27319229 |
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| DOI: | 10.1186/s11671-023-03881-x |
